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| ULBM2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2 is Designed for PACKAGE STYLE .280 4L STUD FEATURES: * * * OmnigoldTM Metalization System 45 B A D C J MAXIMUM RATINGS E I IC VCBO VCEO VCES VEBO PDISS TJ TSTG JC O 0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 35 OC/W O O O O DIM A B C D E F G H I J K F G H K MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10675 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob PG C IC = 25 mA TC = 25 C O NONETEST CONDITIONS IC = 5.0 mA IE = 1.0 mA VCE = 15 V VCE = 5.0 V VCB = 12 V VCC = 12.5 V POUT = 2.0 W IC = 100 mA f = 1.0 MHz f = 470 MHz MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 20 ----10 10 60 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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